The difference between Schottky diode and ordinary diode
Schottky diode uses metal-semiconductor junction as Schottky barrier to produce rectification effect, which is different from the P-N junction produced by semiconductor-semiconductor junction in general diodes. The characteristics of Schottky barrier make the turn-on voltage drop of Schottky diode lower, and can improve the switching speed.Today, people are interested in Resistors quote There are also many dependencies, and the expectations for products are getting higher and higher. https://www.xinyun-ic.com/
The turn-on voltage of Schottky diode is very low. General diodes will produce a voltage drop of about 0.7-1.7 volts when current flows, but the voltage drop of Schottky diodes is only 0.15-0.45 volts, so the efficiency of the system can be improved.
The common silicon diode can withstand high voltage, but its recovery speed is low, and it can only be used for low-frequency rectification. If it is high-frequency, reverse leakage will occur because it cannot be recovered quickly, which will eventually lead to serious heating and burning of the tube. Schottky diode’s withstand voltage is often low, but its recovery speed is fast, so it can be used in high-frequency occasions, so the switching power supply uses this diode as the rectifier output. Nevertheless, the rectifier tube temperature on the switching power supply is still very high.
Fast recovery diode refers to a diode with short reverse recovery time (less than 5us). Gold doping measures are mostly adopted in the process, and some structures adopt PN junction structure and some adopt improved PIN structure. Its forward voltage drop is higher than that of ordinary diodes (1-2V), and its reverse voltage withstand is mostly below 1200V V. Performance can be divided into two levels: fast recovery and ultra-fast recovery. The reverse recovery time of the former is hundreds of nanoseconds or longer, while that of the latter is below 100 nanoseconds. Schottky diode is a diode based on the barrier formed by the contact between metal and semiconductor, which is called Schottky Barrier Diode for short. It has the advantages of reduced forward voltage (0.4–0.5V), short reverse recovery time (10-40 nanoseconds), large reverse leakage current and low withstand voltage, generally lower than 150V, and is mostly used in low voltage occasions. These two kinds of tubes are usually used for switching power supply. Schottky diode and fast recovery diode are different: the recovery time of the former is about 100 times shorter than that of the latter, and the reverse recovery time of the former is about several nanoseconds! The advantages of the former include low power consumption, high current and ultra-high speed ~! Of course, the electrical characteristics are diodes! The fast recovery diode can obtain high switching speed and high withstand voltage by using gold doping, simple diffusion and other processes. At present, the fast recovery diode is mainly used as a rectifier element in inverter power supply.
